TPAR3J S1G

TPAR3J S1G

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TPAR3J S1G
Description:
DIODE AVALANCHE 600V 3A TO277A
Package:
Tape & Reel (TR)
Datasheet:
TPAR3J S1G Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:TPAR3J S1G
Category:Discrete Semiconductor Products
Subcategory:Diodes - Rectifiers - Single
Manufacturer:Taiwan Semiconductor Corporation
Packaging:Tape & Reel (TR)
Product Status:Active
Diode Type:Avalanche
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:1.55 V @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):120 ns
Current - Reverse Leakage @ Vr:10 µA @ 600 V
Capacitance @ Vr, F:58pF @ 4V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-277, 3-PowerDFN
Supplier Device Package:TO-277A (SMPC)
Operating Temperature - Junction:-55°C ~ 175°C
In Stock: 2849
Stock:
2849 Can Ship Immediately
  • Share:
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