SR106 B0G

SR106 B0G

Images are for reference only
See Product Specifications

SR106 B0G
Description:
DIODE SCHOTTKY 60V 1A DO204AL
Package:
Bulk
Datasheet:
SR106 B0G Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:SR106 B0G
Category:Discrete Semiconductor Products
Subcategory:Diodes - Rectifiers - Single
Manufacturer:Taiwan Semiconductor Corporation
Packaging:Bulk
Product Status:Active
Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):60 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:700 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):-
Current - Reverse Leakage @ Vr:500 µA @ 60 V
Capacitance @ Vr, F:-
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-55°C ~ 150°C
In Stock: 0
Stock:
0 Can Ship Immediately
  • Share:
For Use With
SDUR6060W
SDUR6060W
SMC Diode Solutions
DIODE GEN PURP 600V 60A TO247AC
STPS20M100SG-TR
STPS20M100SG-TR
STMicroelectronics
DIODE SCHOTTKY 100V 20A D2PAK
SK510C
SK510C
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 5A 100V DO-214AB
BYT54M-TR
BYT54M-TR
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 1KV 1.25A SOD57
DPG30IM300PC-TUB
DPG30IM300PC-TUB
IXYS
POWER DIODE DISCRETES-FRED TO-26
VS-HFA16PB120HN3
VS-HFA16PB120HN3
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.2KV 16A TO247AC
S40QR
S40QR
GeneSiC Semiconductor
DIODE GEN PURP REV 1.2KV 40A DO5
MNS1N5819UR-1/TR
MNS1N5819UR-1/TR
Microchip Technology
MNS1N5819UR-1/TR
G3S06520H
G3S06520H
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 20A 2-PI
R6100230XXYZ
R6100230XXYZ
Powerex Inc.
DIODE GEN PURP 200V 300A DO205AB
IRD3CH101DF6
IRD3CH101DF6
Infineon Technologies
DIODE CHIP EMITTER CONTROLLED
FR302G R0G
FR302G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO201AD
You May Also Be Interested In
SMAJ6.0AHR3G
SMAJ6.0AHR3G
Taiwan Semiconductor Corporation
TVS DIODE 6VWM 10.3VC DO214AC
BZW04-28 R1G
BZW04-28 R1G
Taiwan Semiconductor Corporation
TVS DIODE 28.2VWM 45.7VC DO204AL
BZW04-58BHR1G
BZW04-58BHR1G
Taiwan Semiconductor Corporation
TVS DIODE 58.1VWM 92VC DO204AL
SMBJ13AHR5G
SMBJ13AHR5G
Taiwan Semiconductor Corporation
TVS DIODE 13VWM 21.5VC DO214AA
PGSMAJ9.0AHE2G
PGSMAJ9.0AHE2G
Taiwan Semiconductor Corporation
TVS DIODE 9VWM 15.4VC DO214AC
PGSMAJ18CA F4G
PGSMAJ18CA F4G
Taiwan Semiconductor Corporation
TVS DIODE 18VWM 29.2VC DO214AC
SMCJ11C M6G
SMCJ11C M6G
Taiwan Semiconductor Corporation
TVS DIODE 1500W DO214AB SMC
TS15P02GHC2G
TS15P02GHC2G
Taiwan Semiconductor Corporation
BRIDGE RECT 1P 100V 15A TS-6P
BAT54C RFG
BAT54C RFG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOT23
S1DLHRHG
S1DLHRHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A SUB SMA
SR1090 C0G
SR1090 C0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 90V 10A TO220AB
ESH3D R6G
ESH3D R6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO214AB