SK810C R6G

SK810C R6G

Images are for reference only
See Product Specifications

SK810C R6G
Description:
DIODE SCHOTTKY DO214AB
Package:
Tape & Reel (TR)
Datasheet:
SK810C R6G Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:SK810C R6G
Category:Discrete Semiconductor Products
Subcategory:Diodes - Rectifiers - Single
Manufacturer:Taiwan Semiconductor Corporation
Packaging:Tape & Reel (TR)
Product Status:Discontinued at Digi-Key
Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):8A (DC)
Voltage - Forward (Vf) (Max) @ If:900 mV @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):-
Current - Reverse Leakage @ Vr:500 µA @ 100 V
Capacitance @ Vr, F:-
Mounting Type:Surface Mount
Package / Case:DO-214AB, SMC
Supplier Device Package:DO-214AB (SMC)
Operating Temperature - Junction:-55°C ~ 150°C
In Stock: 0
Stock:
0 Can Ship Immediately
  • Share:
For Use With
SL310A-TP
SL310A-TP
Micro Commercial Co
DIODE SCHOTTKY 100V 3A DO214AC
CUHS20F40,H3F
CUHS20F40,H3F
Toshiba Semiconductor and Storage
SCHOTTKY BARRIER DIODE, 40V/2A,
SS13L_R1_00001
SS13L_R1_00001
Panjit International Inc.
LOW VF SURFACE MOUNT SCHOTTKY RE
SSC54-E3/9AT
SSC54-E3/9AT
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 5A DO214AB
GF1M-E3/5CA
GF1M-E3/5CA
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO214BA
S1AFM-M3/6B
S1AFM-M3/6B
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO221AC
SD200SA30B.T1
SD200SA30B.T1
SMC Diode Solutions
PIV 30V IO 60A CHIP SIZE 200MIL
JAN1N5809US/TR
JAN1N5809US/TR
Microchip Technology
UFR,FRR
1N6075US/TR
1N6075US/TR
Microchip Technology
RECTIFIER UFR,FRR
R6030435ESYA
R6030435ESYA
Powerex Inc.
DIODE GEN PURP 400V 350A DO205AB
MURH7005
MURH7005
GeneSiC Semiconductor
DIODE GEN PURP 50V 70A D-67
MSASC150H45LS
MSASC150H45LS
Microchip Technology
RECTIFIER
You May Also Be Interested In
SMAJ110CAH
SMAJ110CAH
Taiwan Semiconductor Corporation
TVS DIODE 110VWM 177VC DO214AC
BZW04-256 R1G
BZW04-256 R1G
Taiwan Semiconductor Corporation
TVS DIODE 256VWM 414VC DO204AL
SMCJ9.0CAHR7G
SMCJ9.0CAHR7G
Taiwan Semiconductor Corporation
TVS DIODE 9VWM 15.4VC DO214AB
1.5KE24CA B0G
1.5KE24CA B0G
Taiwan Semiconductor Corporation
TVS DIODE 20.5VWM 33.2VC DO201
BZW04-273 B0G
BZW04-273 B0G
Taiwan Semiconductor Corporation
TVS DIODE 273VWM 438VC DO204AL
SMCJ22A V7G
SMCJ22A V7G
Taiwan Semiconductor Corporation
TVS DIODE 22VWM 35.5VC DO214AB
PGSMAJ40CAHM2G
PGSMAJ40CAHM2G
Taiwan Semiconductor Corporation
TVS DIODE 40VWM 64.5VC DO214AC
RMB4SH
RMB4SH
Taiwan Semiconductor Corporation
BRIDGE RECT 1P 400V 500MA MBS
SS12H
SS12H
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 1A DO214AC
RS1BLHM2G
RS1BLHM2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 800MA SUBSMA
1N4003GR0
1N4003GR0
Taiwan Semiconductor Corporation
1A,200V,STD.GLASS PASSIVATED REC
BZD17C18P MTG
BZD17C18P MTG
Taiwan Semiconductor Corporation
DIODE ZENER 18V 800MW SUB SMA