RS1JL M2G

RS1JL M2G

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RS1JL M2G
Description:
DIODE GEN PURP 600V 800MA SUBSMA
Package:
Tape & Reel (TR)
Datasheet:
RS1JL M2G Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:RS1JL M2G
Category:Discrete Semiconductor Products
Subcategory:Diodes - Rectifiers - Single
Manufacturer:Taiwan Semiconductor Corporation
Packaging:Tape & Reel (TR)
Product Status:Active
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):800mA
Voltage - Forward (Vf) (Max) @ If:1.3 V @ 800 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):250 ns
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:10pF @ 4V, 1MHz
Mounting Type:Surface Mount
Package / Case:DO-219AB
Supplier Device Package:Sub SMA
Operating Temperature - Junction:-55°C ~ 150°C
In Stock: 0
Stock:
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