HERAF1006G

HERAF1006G

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HERAF1006G
Description:
DIODE GEN PURP 10A 600V IT0-220A
Package:
Tube
Datasheet:
HERAF1006G Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:HERAF1006G
Category:Discrete Semiconductor Products
Subcategory:Diodes - Rectifiers - Single
Manufacturer:Taiwan Semiconductor Corporation
Packaging:Tube
Product Status:Active
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):10A (DC)
Voltage - Forward (Vf) (Max) @ If:1.7 V @ 10 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):80 ns
Current - Reverse Leakage @ Vr:10 µA @ 600 V
Capacitance @ Vr, F:60pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:TO-220-2 Full Pack
Supplier Device Package:ITO-220AC
Operating Temperature - Junction:-55°C ~ 150°C
In Stock: 0
Stock:
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