GBU1003 D2G

GBU1003 D2G

Images are for reference only
See Product Specifications

GBU1003 D2G
Description:
BRIDGE RECT 1PHASE 200V 10A GBU
Package:
Tube
Datasheet:
GBU1003 D2G Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:GBU1003 D2G
Category:Discrete Semiconductor Products
Subcategory:Diodes - Bridge Rectifiers
Manufacturer:Taiwan Semiconductor Corporation
Packaging:Tube
Product Status:Active
Diode Type:Single Phase
Technology:Standard
Voltage - Peak Reverse (Max):200 V
Current - Average Rectified (Io):10 A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 10 A
Current - Reverse Leakage @ Vr:5 µA @ 200 V
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:4-SIP, GBU
Supplier Device Package:GBU
In Stock: 0
Stock:
0 Can Ship Immediately
  • Share:
For Use With
YBS3007G
YBS3007G
Taiwan Semiconductor Corporation
BRIDGE RECT 1PHASE 1KV 3A YBS
VS-36MT80
VS-36MT80
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 3PHASE 800V 35A D-63
VS-1KAB40E
VS-1KAB40E
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1P 400V 1.2A D-38
CDBHM140L-G
CDBHM140L-G
Comchip Technology
BRIDGE RECT 1PHASE 40V 1A MBS
SCAJ10FF
SCAJ10FF
Semtech Corporation
BRIDGE RECT 1PHASE 100V 1.5A
SC3AS4F
SC3AS4F
Semtech Corporation
BRIDGE RECT 3PHASE 400V 16A
RBU2001M
RBU2001M
Rectron USA
BRIDGE RECT GLASS 50V 25A RBU
2W04G
2W04G
onsemi
BRIDGE RECT 1PHASE 400V 2A WOB
KBP04M-E4/51
KBP04M-E4/51
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1P 400V 1.5A KBPM
BU20065S-M3/45
BU20065S-M3/45
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1P 600V 20A BU-5S
DBLS208GHC1G
DBLS208GHC1G
Taiwan Semiconductor Corporation
BRIDGE RECT 1PHASE 1.2KV 2A DBLS
MMB2G-HF
MMB2G-HF
Comchip Technology
BRIDGE RECT 1P 200V 800MA MMB
You May Also Be Interested In
PGSMAJ48CAHE3G
PGSMAJ48CAHE3G
Taiwan Semiconductor Corporation
TVS DIODE 48VWM 77.4VC DO214AC
1KSMB33CAHR5G
1KSMB33CAHR5G
Taiwan Semiconductor Corporation
TVS DIODE 28.2VWM 45.7VC DO214AA
1N5397GH
1N5397GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1.5A DO204AC
ES3GBH
ES3GBH
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 3A DO214AA
SR009HR1G
SR009HR1G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 90V 500MA DO204AL
SK36BHR5G
SK36BHR5G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 3A DO214AA
SS26L RUG
SS26L RUG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 2A SUB SMA
FR155GHA0G
FR155GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1.5A DO204AC
1T1G
1T1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A 50V TS-1
MMSZ5236B RHG
MMSZ5236B RHG
Taiwan Semiconductor Corporation
DIODE ZENER 7.5V 500MW SOD123F
BZD17C43P MTG
BZD17C43P MTG
Taiwan Semiconductor Corporation
DIODE ZENER 43V 800MW SUB SMA
1SMA4748 R3G
1SMA4748 R3G
Taiwan Semiconductor Corporation
DIODE ZENER 22V 1.25W DO214AC