GBPC2506W T0G

GBPC2506W T0G

Images are for reference only
See Product Specifications

GBPC2506W T0G
Description:
BRIDGE RECT 1P 600V 25A GBPC-W
Package:
Tray
Datasheet:
GBPC2506W T0G Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:GBPC2506W T0G
Category:Discrete Semiconductor Products
Subcategory:Diodes - Bridge Rectifiers
Manufacturer:Taiwan Semiconductor Corporation
Packaging:Tray
Product Status:Active
Diode Type:Single Phase
Technology:Standard
Voltage - Peak Reverse (Max):600 V
Current - Average Rectified (Io):25 A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:4-Square, GBPC-W
Supplier Device Package:GBPC-W
In Stock: 0
Stock:
0 Can Ship Immediately
  • Share:
For Use With
VS-26MB05A
VS-26MB05A
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 50V 25A D-34
GBU808G
GBU808G
SMC Diode Solutions
BRIDGE RECT 1PHASE 800V 8A GBU
VS-2KBB10
VS-2KBB10
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1P 100V 1.9A 2KBB
SC3BK2F
SC3BK2F
Semtech Corporation
BRIDGE RECT 3PHASE 200V 11A
VUB120-12NO2
VUB120-12NO2
IXYS
BRIDGE RECT 3P 1.2KV 188A V2-PAK
BU10065S-E3/45
BU10065S-E3/45
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1P 600V 3.2A BU-5S
SC50VB160-G
SC50VB160-G
Comchip Technology
BRIDGE RECT 3P 1.6KV 50A SCVB
VSIB2080-E3/45
VSIB2080-E3/45
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1P 800V 3.5A GSIB-5S
DBLS203GHC1G
DBLS203GHC1G
Taiwan Semiconductor Corporation
BRIDGE RECT 1PHASE 200V 2A DBLS
GBLA04H
GBLA04H
Taiwan Semiconductor Corporation
BRIDGE RECT 1PHASE 400V 4A GBL
BR1501-G
BR1501-G
Comchip Technology
BRIDGE RECT
DB106ST-G
DB106ST-G
Comchip Technology
RECTIFIER BRIDGE 1A 800V DBS
You May Also Be Interested In
SMB10J14CAHR5G
SMB10J14CAHR5G
Taiwan Semiconductor Corporation
TVS DIODE 14VWM 23.2VC DO214AA
P6SMB7.5CA R5G
P6SMB7.5CA R5G
Taiwan Semiconductor Corporation
TVS DIODE 6.4VWM 11.3VC DO214AA
SMBJ110A R5G
SMBJ110A R5G
Taiwan Semiconductor Corporation
TVS DIODE 110VWM 177VC DO214AA
BZW04-7V0B B0G
BZW04-7V0B B0G
Taiwan Semiconductor Corporation
TVS DIODE 7.02VWM 12.1VC DO204AL
PGSMAJ30AHF3G
PGSMAJ30AHF3G
Taiwan Semiconductor Corporation
TVS DIODE 30VWM 48.4VC DO214AC
1.5SMC200 R6
1.5SMC200 R6
Taiwan Semiconductor Corporation
TVS DIODE 3000W DO214AB SMC
SMCJ18 R7
SMCJ18 R7
Taiwan Semiconductor Corporation
TVS DIODE 1500W DO214AB SMC
S15MCHV7G
S15MCHV7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1KV 15A DO214AB
RSFGL M2G
RSFGL M2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 500MA SUBSMA
S8JC R6G
S8JC R6G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO214AB
BZT55B7V5 L1G
BZT55B7V5 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 7.5V 500MW MINI MELF
TSM150NB04DCR RLG
TSM150NB04DCR RLG
Taiwan Semiconductor Corporation
DUAL N-CHANNEL POWER MOSFET 40V,