GBPC2506M T0G

GBPC2506M T0G

Images are for reference only
See Product Specifications

GBPC2506M T0G
Description:
BRIDGE RECT 1P 600V 25A GBPC-M
Package:
Tray
Datasheet:
GBPC2506M T0G Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:GBPC2506M T0G
Category:Discrete Semiconductor Products
Subcategory:Diodes - Bridge Rectifiers
Manufacturer:Taiwan Semiconductor Corporation
Packaging:Tray
Product Status:Active
Diode Type:Single Phase
Technology:Standard
Voltage - Peak Reverse (Max):600 V
Current - Average Rectified (Io):25 A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:QC Terminal
Package / Case:4-Square, GBPC-M
Supplier Device Package:GBPC-M
In Stock: 0
Stock:
0 Can Ship Immediately
  • Share:
For Use With
GBPC3510W-G
GBPC3510W-G
Comchip Technology
BRIDGE RECT 1P 1KV 35A GBPC-W
B6S-G
B6S-G
Comchip Technology
BRIDGE RECT 1P 600V 800MA MBS
GBI25M
GBI25M
Diotec Semiconductor
1PH BRIDGE 30X20X3.6 1000V 25A
B380C800DM-E3/45
B380C800DM-E3/45
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1P 600V 900MA DFM
GBJ8G
GBJ8G
SURGE
8A -400V - GBJ - BRIDGE
TT8M-T
TT8M-T
Diodes Incorporated
MEDIUM/HIGH POWER BRIDGE TTL T&R
KBPC5004T
KBPC5004T
GeneSiC Semiconductor
BRIDGE RECT 1PHASE 400V 50A KBPC
KBPC1506W-A1-0000
KBPC1506W-A1-0000
Yangzhou Yangjie Electronic Technology Co.,Ltd
RECT BRIDGE 600V 15A GBPCW-G
KBPC5010W-A1-0000
KBPC5010W-A1-0000
Yangzhou Yangjie Electronic Technology Co.,Ltd
RECT BRIDGE 1000V 50A GBPCW-G
VSIB1520-E3/45
VSIB1520-E3/45
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1P 200V 3.5A GSIB-5S
PDAATARA1218
PDAATARA1218
Powerex Inc.
3-PHASE FULL-CTRL RECT ASSEMBLY
CBRSDSH5-40 TR13
CBRSDSH5-40 TR13
Central Semiconductor Corp
TRANSISTOR
You May Also Be Interested In
SMF30A RVG
SMF30A RVG
Taiwan Semiconductor Corporation
TVS DIODE 30VWM 48.4VC SOD123W
SMBJ8V0CA
SMBJ8V0CA
Taiwan Semiconductor Corporation
TVS DIODE 8VWM 13.6VC DO214AA
BZW04-44 A0G
BZW04-44 A0G
Taiwan Semiconductor Corporation
TVS DIODE 43.6VWM 70.1VC DO204AL
PGSMAJ54CA E3G
PGSMAJ54CA E3G
Taiwan Semiconductor Corporation
TVS DIODE 54VWM 87.1VC DO214AC
PGSMAJ100CAHF2G
PGSMAJ100CAHF2G
Taiwan Semiconductor Corporation
TVS DIODE 100VWM 162VC DO214AC
1.5SMC47C R6G
1.5SMC47C R6G
Taiwan Semiconductor Corporation
TVS DIODE 1500W DO214AB SMC
S3JB R5G
S3JB R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO214AA
BA159G R1G
BA159G R1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A DO204AL
SS25HM4G
SS25HM4G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 50V 2A DO214AA
RSFKLHMTG
RSFKLHMTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 500MA SUBSMA
SFAF1004GHC0G
SFAF1004GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 10A ITO220AC
TSM2NB60CP ROG
TSM2NB60CP ROG
Taiwan Semiconductor Corporation
MOSFET N-CHANNEL 600V 2A TO252