F1T6GHA1G

F1T6GHA1G

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F1T6GHA1G
Description:
DIODE GEN PURP 800V 1A TS-1
Package:
Tape & Box (TB)
Datasheet:
F1T6GHA1G Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:F1T6GHA1G
Category:Discrete Semiconductor Products
Subcategory:Diodes - Rectifiers - Single
Manufacturer:Taiwan Semiconductor Corporation
Packaging:Tape & Box (TB)
Product Status:Active
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):800 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.3 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):500 ns
Current - Reverse Leakage @ Vr:5 µA @ 800 V
Capacitance @ Vr, F:15pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:T-18, Axial
Supplier Device Package:TS-1
Operating Temperature - Junction:-55°C ~ 150°C
In Stock: 0
Stock:
0 Can Ship Immediately
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