6A10GHB0G

6A10GHB0G

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6A10GHB0G
Description:
DIODE GEN PURP 100V 6A R-6
Package:
Bulk
Datasheet:
6A10GHB0G Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:6A10GHB0G
Category:Discrete Semiconductor Products
Subcategory:Diodes - Rectifiers - Single
Manufacturer:Taiwan Semiconductor Corporation
Packaging:Bulk
Product Status:Active
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):6A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 6 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):-
Current - Reverse Leakage @ Vr:10 µA @ 100 V
Capacitance @ Vr, F:60pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:R-6, Axial
Supplier Device Package:R-6
Operating Temperature - Junction:-55°C ~ 150°C
In Stock: 0
Stock:
0 Can Ship Immediately
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