1N5817HB0G

1N5817HB0G

Images are for reference only
See Product Specifications

1N5817HB0G
Description:
DIODE SCHOTTKY 20V 1A DO204AL
Package:
Bulk
Datasheet:
1N5817HB0G Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:1N5817HB0G
Category:Discrete Semiconductor Products
Subcategory:Diodes - Rectifiers - Single
Manufacturer:Taiwan Semiconductor Corporation
Packaging:Bulk
Product Status:Active
Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):20 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:450 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):-
Current - Reverse Leakage @ Vr:1 mA @ 20 V
Capacitance @ Vr, F:55pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-55°C ~ 125°C
In Stock: 0
Stock:
0 Can Ship Immediately
  • Share:
For Use With
MURS160BJ
MURS160BJ
WeEn Semiconductors
ULTRAFAST POWER DIODE
F12K120
F12K120
Diotec Semiconductor
DIODE FR D8X7.5 120V 12A
BAS385-TR3
BAS385-TR3
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA MICMELF
GS2J-LTP
GS2J-LTP
Micro Commercial Co
DIODE GEN PURP 600V 2A DO214AC
S1KL
S1KL
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1A SUB SMA
SB340EA-G
SB340EA-G
Comchip Technology
DIODE SCHOTTKY 40V 3A DO201AD
VS-VSKE250-16PBF
VS-VSKE250-16PBF
Vishay General Semiconductor - Diodes Division
DIODE GP 1.6KV 250A MAGNAPAK
SL56C
SL56C
SURGE
5A -60V - SMC (DO-214AB) - RECTI
IDV02S60CXKSA1
IDV02S60CXKSA1
Infineon Technologies
DIODE SCHOTTKY 600V 2A TO220-2FP
CS3M-E3/I
CS3M-E3/I
Vishay General Semiconductor - Diodes Division
DIODE GPP 1000V 3.0A DO-214AB
RSFBLHMTG
RSFBLHMTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 500MA SUBSMA
MBRF10150HC0G
MBRF10150HC0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 10A ITO220AC
You May Also Be Interested In
P4SMA200A R3G
P4SMA200A R3G
Taiwan Semiconductor Corporation
TVS DIODE 171VWM 274VC DO214AC
1.5KE160CA R0G
1.5KE160CA R0G
Taiwan Semiconductor Corporation
TVS DIODE 136VWM 219VC DO201
SMCJ10AHM6G
SMCJ10AHM6G
Taiwan Semiconductor Corporation
TVS DIODE 10VWM 17VC DO214AB
SA22AHB0G
SA22AHB0G
Taiwan Semiconductor Corporation
TVS DIODE 22VWM 46.6VC DO204AC
SF1007GH
SF1007GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 10A TO220AB
RS1A R3G
RS1A R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO214AC
SS320HR7G
SS320HR7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO214AB
S4B M6
S4B M6
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO214AB
2A01G
2A01G
Taiwan Semiconductor Corporation
DIODE GEN PURP 2A 50V DO-15
BZY55C4V3 RYG
BZY55C4V3 RYG
Taiwan Semiconductor Corporation
DIODE ZENER 4.3V 500MW 0805
1SMA5949HR3G
1SMA5949HR3G
Taiwan Semiconductor Corporation
DIODE ZENER 100V 1.5W DO214AC
TSM015NA03CR RLG
TSM015NA03CR RLG
Taiwan Semiconductor Corporation
MOSFET N-CH 30V 205A 8PDFN