1N4002GH

1N4002GH

Images are for reference only
See Product Specifications

1N4002GH
Description:
DIODE GEN PURP 1A 100V DO-41
Package:
Tape & Reel (TR)
Datasheet:
1N4002GH Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:1N4002GH
Category:Discrete Semiconductor Products
Subcategory:Diodes - Rectifiers - Single
Manufacturer:Taiwan Semiconductor Corporation
Packaging:Tape & Reel (TR)
Product Status:Active
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):1A (DC)
Voltage - Forward (Vf) (Max) @ If:1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):-
Current - Reverse Leakage @ Vr:5 µA @ 100 V
Capacitance @ Vr, F:10pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-55°C ~ 150°C
In Stock: 0
Stock:
0 Can Ship Immediately
  • Share:
For Use With
S1JAL
S1JAL
Taiwan Semiconductor Corporation
1A, 600V, STANDARD RECOVERY RECT
JANTX1N4148-1
JANTX1N4148-1
Microchip Technology
DIODE GEN PURP 75V 200MA DO35
BAT54W-HE3-08
BAT54W-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
SL02-M-18
SL02-M-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 20V DO219-M
R6031222PSYA
R6031222PSYA
Powerex Inc.
DIODE GEN PURP 1.2KV 220A DO205
R7012004XXUA
R7012004XXUA
Powerex Inc.
DIODE GEN PURP 2KV 450A DO200
MUR120-E3/73
MUR120-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO204AC
SS10PH9HM3/87A
SS10PH9HM3/87A
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 90V 10A TO277A
MBR16H35-E3/45
MBR16H35-E3/45
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY TO-220AC
NGTD15R65F2SWK
NGTD15R65F2SWK
onsemi
DIODE GEN PURP 650V DIE
ES1JL MHG
ES1JL MHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A SUB SMA
SK53C M6
SK53C M6
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO214AB
You May Also Be Interested In
SMAJ51CA R3G
SMAJ51CA R3G
Taiwan Semiconductor Corporation
TVS DIODE 51VWM 82.4VC DO214AC
SMBJ40AHR5G
SMBJ40AHR5G
Taiwan Semiconductor Corporation
TVS DIODE 40VWM 64.5VC DO214AA
BZW04-136 B0G
BZW04-136 B0G
Taiwan Semiconductor Corporation
TVS DIODE 136VWM 219VC DO204AL
PGSMAJ78CA F3G
PGSMAJ78CA F3G
Taiwan Semiconductor Corporation
TVS DIODE 78VWM 126VC DO214AC
DBL158GH
DBL158GH
Taiwan Semiconductor Corporation
BRIDGE RECT 1P 1.2KV 1.5A DBL
TS40P06G
TS40P06G
Taiwan Semiconductor Corporation
BRIDGE RECT 1P 800V 40A TS-6P
BAS116 RFG
BAS116 RFG
Taiwan Semiconductor Corporation
DIODE GEN PURP 75V 200MA SOT23
SS19LHM2G
SS19LHM2G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 90V 1A SUB SMA
SK33B R5G
SK33B R5G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO214AA
1T6G A1G
1T6G A1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1A TS-1
BZD27C18P RUG
BZD27C18P RUG
Taiwan Semiconductor Corporation
DIODE ZENER 17.95V 1W SUB SMA
BZD27C20P RQG
BZD27C20P RQG
Taiwan Semiconductor Corporation
DIODE ZENER 20V 1W SUB SMA