STU9HN65M2

STU9HN65M2

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STU9HN65M2
Description:
MOSFET N-CH 650V 5.5A IPAK
Package:
Tube
Datasheet:
STU9HN65M2 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:STU9HN65M2
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:STMicroelectronics
Packaging:Tube
Product Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:820mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:11.5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:325 pF @ 100 V
FET Feature:-
Power Dissipation (Max):60W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-251 (IPAK)
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
In Stock: 2397
Stock:
2397 Can Ship Immediately
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