STS9P2UH7

STS9P2UH7

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STS9P2UH7
Description:
MOSFET P-CH 20V 9A 8SO
Package:
Tape & Reel (TR)
Datasheet:
STS9P2UH7 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:STS9P2UH7
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:STMicroelectronics
Packaging:Tape & Reel (TR)
Product Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:22.5mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:2390 pF @ 16 V
FET Feature:-
Power Dissipation (Max):2.7W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
In Stock: 0
Stock:
0 Can Ship Immediately
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