STI12N65M5

STI12N65M5

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STI12N65M5
Description:
MOSFET N-CH 650V 8.5A I2PAK
Package:
Tube
Datasheet:
STI12N65M5 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:STI12N65M5
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:STMicroelectronics
Packaging:Tube
Product Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:430mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:900 pF @ 100 V
FET Feature:-
Power Dissipation (Max):70W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
In Stock: 0
Stock:
0 Can Ship Immediately
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