STH200N10WF7-2

STH200N10WF7-2

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STH200N10WF7-2
Description:
N-CHANNEL 100 V, 4.8 MOHM TYP.,
Package:
Tape & Reel (TR)
Datasheet:
STH200N10WF7-2 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:STH200N10WF7-2
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:STMicroelectronics
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4mOhm @ 90A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:93 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4430 pF @ 25 V
FET Feature:-
Power Dissipation (Max):340W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:H2Pak-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock: 144
Stock:
144 Can Ship Immediately
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