STB6NK60Z-1

STB6NK60Z-1

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STB6NK60Z-1
Description:
MOSFET N-CH 600V 6A I2PAK
Package:
Tube
Datasheet:
STB6NK60Z-1 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:STB6NK60Z-1
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:STMicroelectronics
Packaging:Tube
Product Status:Not For New Designs
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 3A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:46 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:905 pF @ 25 V
FET Feature:-
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
In Stock: 0
Stock:
0 Can Ship Immediately
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