A1P50S65M2

A1P50S65M2

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A1P50S65M2
Description:
IGBT MOD 650V 50A 208W ACEPACK1
Package:
Tray
Datasheet:
A1P50S65M2 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:A1P50S65M2
Category:Discrete Semiconductor Products
Subcategory:Transistors - IGBTs - Modules
Manufacturer:STMicroelectronics
Packaging:Tray
Product Status:Active
IGBT Type:Trench Field Stop
Configuration:Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max):650 V
Current - Collector (Ic) (Max):50 A
Power - Max:208 W
Vce(on) (Max) @ Vge, Ic:2.3V @ 15V, 50A
Current - Collector Cutoff (Max):100 µA
Input Capacitance (Cies) @ Vce:4.15 nF @ 25 V
Input:Standard
NTC Thermistor:Yes
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:ACEPACK™ 1
In Stock: 0
Stock:
0 Can Ship Immediately
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