1N1193A

1N1193A

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1N1193A
Description:
20 AMP SILICON RECTIFIER DO-5
Package:
Box
Datasheet:
1N1193A Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:1N1193A
Category:Discrete Semiconductor Products
Subcategory:Diodes - Rectifiers - Single
Manufacturer:Solid State Inc.
Packaging:Box
Product Status:Active
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):-
Current - Average Rectified (Io):12A
Voltage - Forward (Vf) (Max) @ If:1.2 V @ 30 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):-
Current - Reverse Leakage @ Vr:-
Capacitance @ Vr, F:-
Mounting Type:Stud Mount
Package / Case:DO-203AA, DO-4, Stud
Supplier Device Package:DO-4
Operating Temperature - Junction:-65°C ~ 200°C
In Stock: 50
Stock:
50 Can Ship Immediately
  • Share:
For Use With
DHG30IM600PC-TUB
DHG30IM600PC-TUB
IXYS
POWER DIODE DISCRETES-SONIC TO-2
BAS16-HE3-18
BAS16-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOT23
EGF1C-E3/67A
EGF1C-E3/67A
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 1A DO214BA
VS-12FL20S02
VS-12FL20S02
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 12A DO203AA
JANTX1N5418/TR
JANTX1N5418/TR
Microchip Technology
RECTIFIER UFR,FRR
BY229X-600HE3/45
BY229X-600HE3/45
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 8A ITO220AC
RGP10ME-M3/73
RGP10ME-M3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
RGP10DHM3/54
RGP10DHM3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO204AL
RS3BHM6G
RS3BHM6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO214AB
S3A M6G
S3A M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 3A DO214AB
F1T1G A0G
F1T1G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A TS-1
VS-95-5314PBF
VS-95-5314PBF
Vishay General Semiconductor - Diodes Division
DIODE GENERAL PURPOSE TO220
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