SCT2450KEHRC11

SCT2450KEHRC11

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SCT2450KEHRC11
Description:
1200V, 10A, THD, SILICON-CARBIDE
Package:
Tube
Datasheet:
SCT2450KEHRC11 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:SCT2450KEHRC11
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Rohm Semiconductor
Packaging:Tube
Product Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):18V
Rds On (Max) @ Id, Vgs:585mOhm @ 3A, 18V
Vgs(th) (Max) @ Id:4V @ 900µA
Gate Charge (Qg) (Max) @ Vgs:27 nC @ 18 V
Vgs (Max):+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds:463 pF @ 800 V
FET Feature:-
Power Dissipation (Max):85W (Tc)
Operating Temperature:175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247N
Package / Case:TO-247-3
In Stock: 0
Stock:
0 Can Ship Immediately
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