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See Product Specifications
| Part Number: | RGT8NS65DGC9 |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - IGBTs - Single |
| Manufacturer: | Rohm Semiconductor |
| Packaging: | Tube |
| Product Status: | Active |
| IGBT Type: | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max): | 650 V |
| Current - Collector (Ic) (Max): | 8 A |
| Current - Collector Pulsed (Icm): | 12 A |
| Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 4A |
| Power - Max: | 65 W |
| Switching Energy: | - |
| Input Type: | Standard |
| Gate Charge: | 13.5 nC |
| Td (on/off) @ 25°C: | 17ns/69ns |
| Test Condition: | 400V, 4A, 50Ohm, 15V |
| Reverse Recovery Time (trr): | 40 ns |
| Operating Temperature: | -40°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package: | TO-262 |
