DTC123EMFHAT2L

DTC123EMFHAT2L

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DTC123EMFHAT2L
Description:
NPN, SOT-723, R1=R2 POTENTIAL DI
Package:
Cut Tape (CT)
Datasheet:
DTC123EMFHAT2L Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:DTC123EMFHAT2L
Category:Discrete Semiconductor Products
Subcategory:Transistors - Bipolar (BJT) - Single, Pre-Biased
Manufacturer:Rohm Semiconductor
Packaging:Cut Tape (CT)
Product Status:Not For New Designs
Transistor Type:NPN - Pre-Biased + Diode
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):2.2 kOhms
Resistor - Emitter Base (R2):2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 20mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:250 MHz
Power - Max:150 mW
Mounting Type:Surface Mount
Package / Case:SOT-723
Supplier Device Package:VMT3
In Stock: 0
Stock:
0 Can Ship Immediately
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