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| Part Number: | RJP65T54DPM-E0#T2 |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - IGBTs - Single |
| Manufacturer: | Renesas Electronics America Inc |
| Packaging: | Tube |
| Product Status: | Obsolete |
| IGBT Type: | Trench |
| Voltage - Collector Emitter Breakdown (Max): | 650 V |
| Current - Collector (Ic) (Max): | 60 A |
| Current - Collector Pulsed (Icm): | 225 A |
| Vce(on) (Max) @ Vge, Ic: | 1.68V @ 15V, 30A |
| Power - Max: | 63.5 W |
| Switching Energy: | 330µJ (on), 760µJ (off) |
| Input Type: | Standard |
| Gate Charge: | 72 nC |
| Td (on/off) @ 25°C: | 35ns/120ns |
| Test Condition: | 400V, 30A, 10Ohm, 15V |
| Reverse Recovery Time (trr): | - |
| Operating Temperature: | 175°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-3PFM, SC-93-3 |
| Supplier Device Package: | TO-3PF |
