RJK4006DPD-00#J2

RJK4006DPD-00#J2

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RJK4006DPD-00#J2
Description:
POWER FIELD-EFFECT TRANSISTOR
Package:
Bulk
Datasheet:
RJK4006DPD-00#J2 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:RJK4006DPD-00#J2
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Renesas Electronics America Inc
Packaging:Bulk
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):400 V
Current - Continuous Drain (Id) @ 25°C:8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:800mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:620 pF @ 25 V
FET Feature:-
Power Dissipation (Max):65W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:MP-3A
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock: 33000
Stock:
33000 Can Ship Immediately
  • Share:
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