RJK2017DPP-M0#T2

RJK2017DPP-M0#T2

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RJK2017DPP-M0#T2
Description:
ABU / MOSFET
Package:
Tube
Datasheet:
RJK2017DPP-M0#T2 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:RJK2017DPP-M0#T2
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Renesas Electronics America Inc
Packaging:Tube
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:45A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:47mOhm @ 22.5A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:66 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:4800 pF @ 25 V
FET Feature:-
Power Dissipation (Max):30W (Tc)
Operating Temperature:150°C
Mounting Type:Through Hole
Supplier Device Package:TO-220FL
Package / Case:TO-220-3 Full Pack
In Stock: 0
Stock:
0 Can Ship Immediately
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