RJK0331DPB-01#J0

RJK0331DPB-01#J0

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RJK0331DPB-01#J0
Description:
POWER FIELD-EFFECT TRANSISTOR
Package:
Bulk
Datasheet:
RJK0331DPB-01#J0 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:RJK0331DPB-01#J0
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Renesas Electronics America Inc
Packaging:Bulk
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:40A (Ta)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:3.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 4.5 V
Vgs (Max):-
Input Capacitance (Ciss) (Max) @ Vds:3380 pF @ 10 V
FET Feature:-
Power Dissipation (Max):50W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK
Package / Case:SC-100, SOT-669
In Stock: 0
Stock:
0 Can Ship Immediately
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