RJH1DF7RDPQ-80#T2

RJH1DF7RDPQ-80#T2

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RJH1DF7RDPQ-80#T2
Mfr.:
Description:
RJH1DF7 - INSULATED GATE BIPOLAR
Package:
Bulk
Datasheet:
RJH1DF7RDPQ-80#T2 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:RJH1DF7RDPQ-80#T2
Category:Discrete Semiconductor Products
Subcategory:Transistors - IGBTs - Single
Manufacturer:Renesas
Packaging:Bulk
Product Status:Obsolete
IGBT Type:-
Voltage - Collector Emitter Breakdown (Max):1350 V
Current - Collector (Ic) (Max):60 A
Current - Collector Pulsed (Icm):-
Vce(on) (Max) @ Vge, Ic:2.55V @ 15V, 35A
Power - Max:250 W
Switching Energy:-
Input Type:Standard
Gate Charge:-
Td (on/off) @ 25°C:58ns/144ns
Test Condition:600V, 35A, 5Ohm, 15V
Reverse Recovery Time (trr):-
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247
In Stock: 400
Stock:
400 Can Ship Immediately
  • Share:
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