RD5.6S-T2-A

RD5.6S-T2-A

Images are for reference only
See Product Specifications

RD5.6S-T2-A
Mfr.:
Description:
RD5.6S-T2-A - ZENER DIODES200 MW
Package:
Bulk
Datasheet:
RD5.6S-T2-A Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:RD5.6S-T2-A
Category:Circuit Protection
Subcategory:TVS - Diodes
Manufacturer:Renesas
Packaging:Bulk
Product Status:Obsolete
Type:Zener
Unidirectional Channels:1
Bidirectional Channels:-
Voltage - Reverse Standoff (Typ):2.5V (Max)
Voltage - Breakdown (Min):-
Voltage - Clamping (Max) @ Ipp:-
Current - Peak Pulse (10/1000µs):-
Power - Peak Pulse:85W
Power Line Protection:No
Applications:General Purpose
Capacitance @ Frequency:-
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-76, SOD-323
Supplier Device Package:2-Super Mini Mold
In Stock: 144000
Stock:
144000 Can Ship Immediately
  • Share:
For Use With
ESDA6V1W5
ESDA6V1W5
STMicroelectronics
TVS DIODE 3VWM SOT323-5
P4SMAJ16C_R1_00001
P4SMAJ16C_R1_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
BZW04-213H
BZW04-213H
Taiwan Semiconductor Corporation
TVS DIODE 213VWM 344VC DO204AL
SA48AHE3/54
SA48AHE3/54
Vishay General Semiconductor - Diodes Division
TVS DIODE 48VWM 77.4VC DO204AC
1.5CE62A TR PBFREE
1.5CE62A TR PBFREE
Central Semiconductor Corp
TVS DIODE 53VWM 85VC DO201
SMBJ100AE3/TR13
SMBJ100AE3/TR13
Microchip Technology
TVS DIODE 100VWM 162VC SMBJ
MXLPLAD6.5KP13CAE3
MXLPLAD6.5KP13CAE3
Microchip Technology
TVS DIODE 13VWM 21.5VC PLAD
MV1N8166US
MV1N8166US
Microchip Technology
TVS DIODE 36VWM 59.1VC A SQ-MELF
SMTY12A
SMTY12A
STMicroelectronics
TVS DIODE 12VWM 18.5VC SMA
TPSMA30AHE3/61T
TPSMA30AHE3/61T
Vishay General Semiconductor - Diodes Division
TVS DIODE 25.6VWM 41.4VC DO214AC
P4SMA24CAHR3G
P4SMA24CAHR3G
Taiwan Semiconductor Corporation
TVS DIODE 20.5VWM 33.2VC DO214AC
P4SMA8.2AHM3/H
P4SMA8.2AHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 7.02VWM 12.1VC DO214AC
You May Also Be Interested In
NNCD8.2DA-T1-AT
NNCD8.2DA-T1-AT
Renesas
NNCD8.2DA-T1-AT - ELECTROSTATIC
RD39M-T1B-A
RD39M-T1B-A
Renesas
RD39M - 200MW ZENER DIODE
NNCD20DA(91)-T1-A
NNCD20DA(91)-T1-A
Renesas
NNCD20DA(91)-T1-A - ELECTROSTATI
NNCD3.9D-T1-A
NNCD3.9D-T1-A
Renesas
NNCD3.9D-T1-A - ELECTROSTATIC DI
RD16S(0)-T1-AT
RD16S(0)-T1-AT
Renesas
RD16S - 200MW ZENER DIODE
RD16M-T1B-A
RD16M-T1B-A
Renesas
RD16M-T1B-A - ZENER DIODES 200 M
RD2.2FM-T1-AZ
RD2.2FM-T1-AZ
Renesas
RD2.2FM-T1-AZ - ZENER DIODES1 W
HVD396CKRF-E
HVD396CKRF-E
Renesas
HVD396 - VARIABLE CAPACITANCE DI
UPA2756GR-E1-A
UPA2756GR-E1-A
Renesas
UPA2756 - POWER FIELD-EFFECT TRA
HAT2202C-EL-E
HAT2202C-EL-E
Renesas
HAT2202C-EL-E - SILICON N CHANNE
HAT1069C0S-EL-E
HAT1069C0S-EL-E
Renesas
HAT1069C0S - P-CHANNEL POWER MOS
PS9552L3-V-E3-AX
PS9552L3-V-E3-AX
Renesas
PS9552 - HIGH CMR IGBT GATE DRIV