NNCD6.8F-T1B-AT

NNCD6.8F-T1B-AT

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NNCD6.8F-T1B-AT
Mfr.:
Description:
NNCD6.8F-T1B-AT - ELECTROSTATIC
Package:
Bulk
Datasheet:
NNCD6.8F-T1B-AT Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:NNCD6.8F-T1B-AT
Category:Circuit Protection
Subcategory:TVS - Diodes
Manufacturer:Renesas
Packaging:Bulk
Product Status:Obsolete
Type:Zener
Unidirectional Channels:2
Bidirectional Channels:-
Voltage - Reverse Standoff (Typ):3.5V (Max)
Voltage - Breakdown (Min):6.47V
Voltage - Clamping (Max) @ Ipp:-
Current - Peak Pulse (10/1000µs):-
Power - Peak Pulse:100W
Power Line Protection:No
Applications:General Purpose
Capacitance @ Frequency:110pF @ 1MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SC-59
In Stock: 18000
Stock:
18000 Can Ship Immediately
  • Share:
For Use With
D1213A-02SM-7
D1213A-02SM-7
Diodes Incorporated
TVS DIODE 3.3VWM 10VC SOT25
P6SMBJ12CA-AU_R1_000A1
P6SMBJ12CA-AU_R1_000A1
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
SMA6F7.5A-M3/6B
SMA6F7.5A-M3/6B
Vishay General Semiconductor - Diodes Division
TVS DIODE 7.5VWM 17VC DO221AC
P4SMA36CAHE3_A/H
P4SMA36CAHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 30.8VWM 49.9VC DO214AC
SM15T24A-M3/57T
SM15T24A-M3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 20.5VWM 33.2VC DO214AB
SMCJ64CAHM3_A/H
SMCJ64CAHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 64VWM 103VC DO214AB
JANS1N6107
JANS1N6107
Microchip Technology
TVS DIODE 8.4VWM 16.38VC B AXIAL
1.5KE15-E3/54
1.5KE15-E3/54
Vishay General Semiconductor - Diodes Division
TVS DIODE 12.1VWM 22VC 1.5KE
TPSMP9.1AHE3/85A
TPSMP9.1AHE3/85A
Vishay General Semiconductor - Diodes Division
TVS DIODE 7.78VWM 13.4VC DO220AA
MXSMCG64CA
MXSMCG64CA
Microchip Technology
TVS DIODE 64VWM 103VC SMCG
P6KE350CAHB0G
P6KE350CAHB0G
Taiwan Semiconductor Corporation
TVS DIODE 300VWM 482VC DO204AC
SMCJ40 M6
SMCJ40 M6
Taiwan Semiconductor Corporation
TVS DIODE 1500W DO214AB SMC
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