Images are for reference only
See Product Specifications
| Part Number: | NE85633-T1B-A |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - Bipolar (BJT) - RF |
| Manufacturer: | Renesas |
| Packaging: | Tape & Reel (TR) |
| Product Status: | Last Time Buy |
| Transistor Type: | NPN |
| Voltage - Collector Emitter Breakdown (Max): | 12V |
| Frequency - Transition: | 7GHz |
| Noise Figure (dB Typ @ f): | 1.1dB @ 1GHz |
| Gain: | 11.5dB |
| Power - Max: | 200mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 20mA, 10V |
| Current - Collector (Ic) (Max): | 100mA |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | 3-MINIMOLD |
