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See Product Specifications
| Part Number: | HSG1002VE-TL-E |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - Bipolar (BJT) - RF |
| Manufacturer: | Renesas Electronics America Inc |
| Packaging: | Bulk |
| Product Status: | Active |
| Transistor Type: | NPN |
| Voltage - Collector Emitter Breakdown (Max): | 3.5V |
| Frequency - Transition: | 38GHz |
| Noise Figure (dB Typ @ f): | 0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz |
| Gain: | 8dB ~ 19.5dB |
| Power - Max: | 200mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 5mA, 2V |
| Current - Collector (Ic) (Max): | 35mA |
| Operating Temperature: | - |
| Mounting Type: | Surface Mount |
| Package / Case: | 4-SMD, Gull Wing |
| Supplier Device Package: | 4-MFPAK |
