H5N2522LSTL-E

H5N2522LSTL-E

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H5N2522LSTL-E
Description:
MOSFET N-CH 250V 20A 4LDPAK
Package:
Tape & Reel (TR)
Datasheet:
H5N2522LSTL-E Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:H5N2522LSTL-E
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Renesas Electronics America Inc
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:20A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:180mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:47 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1300 pF @ 25 V
FET Feature:-
Power Dissipation (Max):75W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LDPAK
Package / Case:SC-83
In Stock: 0
Stock:
0 Can Ship Immediately
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