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See Product Specifications
| Part Number: | FA4F4M-T1B-A |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Manufacturer: | Renesas Electronics America Inc |
| Packaging: | Box |
| Product Status: | Obsolete |
| Transistor Type: | NPN - Pre-Biased |
| Current - Collector (Ic) (Max): | 100 mA |
| Voltage - Collector Emitter Breakdown (Max): | 50 V |
| Resistor - Base (R1): | 22 Ohms |
| Resistor - Emitter Base (R2): | 22 Ohms |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 50mA, 5V |
| Vce Saturation (Max) @ Ib, Ic: | 200mV @ 250µ, 5mA |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| Frequency - Transition: | - |
| Power - Max: | 200 mW |
| Mounting Type: | - |
| Package / Case: | - |
| Supplier Device Package: | - |
