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| Part Number: | 2SJ649-AZ |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - FETs, MOSFETs - Single |
| Manufacturer: | Renesas Electronics America Inc |
| Packaging: | Bulk |
| Product Status: | Last Time Buy |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 60 V |
| Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
| Rds On (Max) @ Id, Vgs: | 48mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id: | - |
| Gate Charge (Qg) (Max) @ Vgs: | 38 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1900 pF @ 10 V |
| FET Feature: | - |
| Power Dissipation (Max): | 2W (Ta), 25W (Tc) |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-220 Isolated Tab |
| Package / Case: | TO-220-3 Isolated Tab |
