Images are for reference only
See Product Specifications
| Part Number: | 2SJ529L06-E |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - FETs, MOSFETs - Single |
| Manufacturer: | Renesas |
| Packaging: | Bulk |
| Product Status: | Obsolete |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 60 V |
| Current - Continuous Drain (Id) @ 25°C: | 10A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
| Rds On (Max) @ Id, Vgs: | 160mOhm @ 5A, 10V |
| Vgs(th) (Max) @ Id: | 2V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | - |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 580 pF @ 10 V |
| FET Feature: | - |
| Power Dissipation (Max): | 20W (Tc) |
| Operating Temperature: | 150°C |
| Mounting Type: | Through Hole |
| Supplier Device Package: | DPAK(L)-(2) |
| Package / Case: | TO-251-3 Long Leads, IPak, TO-251AB |
