2SJ358C-T1-AZ

2SJ358C-T1-AZ

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2SJ358C-T1-AZ
Mfr.:
Description:
2SJ358C-T1-AZ - P-CHANNEL MOS FE
Package:
Bulk
Datasheet:
2SJ358C-T1-AZ Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:2SJ358C-T1-AZ
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Renesas
Packaging:Bulk
Product Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Rds On (Max) @ Id, Vgs:143mOhm @ 2A, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:666 pF @ 10 V
FET Feature:-
Power Dissipation (Max):2W (Ta)
Operating Temperature:150°C
Mounting Type:Surface Mount
Supplier Device Package:MP-2
Package / Case:TO-243AA
In Stock: 15000
Stock:
15000 Can Ship Immediately
  • Share:
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