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Part Number: | 2SJ162-E |
Category: | Discrete Semiconductor Products |
Subcategory: | Transistors - FETs, MOSFETs - Single |
Manufacturer: | Renesas Electronics America Inc |
Packaging: | Tube |
Product Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 160 V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | - |
Vgs(th) (Max) @ Id: | - |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | ±15V |
Input Capacitance (Ciss) (Max) @ Vds: | 900 pF @ 10 V |
FET Feature: | - |
Power Dissipation (Max): | 100W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-3P |
Package / Case: | TO-220-3 Full Pack |