Images are for reference only
See Product Specifications
| Part Number: | 2SC3585-T1B-A |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - Bipolar (BJT) - RF |
| Manufacturer: | Renesas Electronics America Inc |
| Packaging: | Bulk |
| Product Status: | Obsolete |
| Transistor Type: | NPN |
| Voltage - Collector Emitter Breakdown (Max): | 10V |
| Frequency - Transition: | 10GHz |
| Noise Figure (dB Typ @ f): | 1.8dB @ 2GHz |
| Gain: | 9dB |
| Power - Max: | 200mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 10mA, 6V |
| Current - Collector (Ic) (Max): | 35mA |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | SOT23-3 (TO-236) |
