Images are for reference only
See Product Specifications
| Part Number: | RMD1N25ES9 |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - FETs, MOSFETs - Single |
| Manufacturer: | Rectron USA |
| Packaging: | Tape & Reel (TR) |
| Product Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 25 V |
| Current - Continuous Drain (Id) @ 25°C: | 1.1A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs: | 600mOhm @ 500mA, 4.5V |
| Vgs(th) (Max) @ Id: | 1.1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | - |
| Vgs (Max): | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds: | 30 pF @ 10 V |
| FET Feature: | - |
| Power Dissipation (Max): | 800mW (Ta) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | SOT-363 |
| Package / Case: | 6-TSSOP, SC-88, SOT-363 |
