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| Part Number: | P3M06120T3 |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - FETs, MOSFETs - Single |
| Manufacturer: | PN Junction Semiconductor |
| Packaging: | Tube |
| Product Status: | Active |
| FET Type: | N-Channel |
| Technology: | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss): | 650 V |
| Current - Continuous Drain (Id) @ 25°C: | 29A |
| Drive Voltage (Max Rds On, Min Rds On): | 15V |
| Rds On (Max) @ Id, Vgs: | 158mOhm @ 10A, 15V |
| Vgs(th) (Max) @ Id: | 2.2V @ 5mA (Typ) |
| Gate Charge (Qg) (Max) @ Vgs: | - |
| Vgs (Max): | +20V, -8V |
| Input Capacitance (Ciss) (Max) @ Vds: | - |
| FET Feature: | - |
| Power Dissipation (Max): | 153W |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-220-2L |
| Package / Case: | TO-220-2 |
