PJW3N10A_R2_00001

PJW3N10A_R2_00001

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PJW3N10A_R2_00001
Description:
100V N-CHANNEL ENHANCEMENT MODE
Package:
Tape & Reel (TR)
Datasheet:
PJW3N10A_R2_00001 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:PJW3N10A_R2_00001
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Panjit International Inc.
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:310mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:9.1 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:508 pF @ 30 V
FET Feature:-
Power Dissipation (Max):3.1W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223
Package / Case:TO-261-4, TO-261AA
In Stock: 4890
Stock:
4890 Can Ship Immediately
  • Share:
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