PJD50N10AL_L2_00001

PJD50N10AL_L2_00001

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PJD50N10AL_L2_00001
Description:
100V N-CHANNEL ENHANCEMENT MODE
Package:
Tape & Reel (TR)
Datasheet:
PJD50N10AL_L2_00001 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:PJD50N10AL_L2_00001
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Panjit International Inc.
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:6.3A (Ta), 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:25mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1485 pF @ 30 V
FET Feature:-
Power Dissipation (Max):2W (Ta), 83W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock: 0
Stock:
0 Can Ship Immediately
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