PJD16P06A_L2_00001

PJD16P06A_L2_00001

Images are for reference only
See Product Specifications

PJD16P06A_L2_00001
Description:
60V P-CHANNEL ENHANCEMENT MODE M
Package:
Tape & Reel (TR)
Datasheet:
PJD16P06A_L2_00001 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:PJD16P06A_L2_00001
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Panjit International Inc.
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:5A (Ta), 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:48mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1256 pF @ 30 V
FET Feature:-
Power Dissipation (Max):2W (Ta), 25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock: 0
Stock:
0 Can Ship Immediately
  • Share:
For Use With
IPD30N03S4L09ATMA1
IPD30N03S4L09ATMA1
Infineon Technologies
MOSFET N-CH 30V 30A TO252-3
FQPF7P06
FQPF7P06
Fairchild Semiconductor
MOSFET P-CH 60V 5.3A TO220F
STD25NF20
STD25NF20
STMicroelectronics
MOSFET N-CH 200V 18A DPAK
2N7000-G
2N7000-G
Microchip Technology
MOSFET N-CH 60V 200MA TO92-3
PJD14P06A-AU_L2_000A1
PJD14P06A-AU_L2_000A1
Panjit International Inc.
60V P-CHANNEL ENHANCEMENT MODE M
BSZ063N04LS6ATMA1
BSZ063N04LS6ATMA1
Infineon Technologies
MOSFET N-CH 40V 15A/40A TSDSON
IRC540PBF
IRC540PBF
Vishay Siliconix
MOSFET N-CH 100V 28A TO220-5
SPB100N04S2-04
SPB100N04S2-04
Infineon Technologies
MOSFET N-CH 40V 100A TO263-3
TPCC8006-H(TE12LQM
TPCC8006-H(TE12LQM
Toshiba Semiconductor and Storage
MOSFET N-CH 30V 22A 8TSON
SSM3K310T(TE85L,F)
SSM3K310T(TE85L,F)
Toshiba Semiconductor and Storage
MOSFET N-CH 20V 5A TSM
AON7400AL_102
AON7400AL_102
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 30V 15A/40A 8DFN
BUK9E4R9-60E,127
BUK9E4R9-60E,127
NXP USA Inc.
MOSFET N-CH 60V 100A I2PAK
You May Also Be Interested In
SMF170A_R1_00001
SMF170A_R1_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
P6SMB9.1CA_R1_00001
P6SMB9.1CA_R1_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
1.5SMC36CA-AU_R1_000A1
1.5SMC36CA-AU_R1_000A1
Panjit International Inc.
GLASS PASSIVATED JUNCTION TRANSI
3KP6.0CA_R2_00001
3KP6.0CA_R2_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
P6SMBJ58CA-AU_R1_000A1
P6SMBJ58CA-AU_R1_000A1
Panjit International Inc.
SMB, TVS
MBR880DC_R2_00001
MBR880DC_R2_00001
Panjit International Inc.
D PAK SURFACE MOUNT SCHOTTKY BAR
ES1J_R1_00001
ES1J_R1_00001
Panjit International Inc.
SMA, SUPER
ED503S_L2_00001
ED503S_L2_00001
Panjit International Inc.
SUPERFAST RECOVERY RECTIFIERS
BZX84C22TW_R1_00001
BZX84C22TW_R1_00001
Panjit International Inc.
TRIPLE ISOLATED SURFACE MOUNT ZE
MMBZ5245BW_R1_00001
MMBZ5245BW_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
1SMA4747-AU_R1_000A1
1SMA4747-AU_R1_000A1
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
PJQ4606_R1_00001
PJQ4606_R1_00001
Panjit International Inc.
30V COMPLEMENTARY ENHANCEMENT MO