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See Product Specifications
| Part Number: | NXH200T120H3Q2F2STNG |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - IGBTs - Modules |
| Manufacturer: | onsemi |
| Packaging: | Tray |
| Product Status: | Active |
| IGBT Type: | Trench Field Stop |
| Configuration: | Half Bridge |
| Voltage - Collector Emitter Breakdown (Max): | 650 V |
| Current - Collector (Ic) (Max): | 330 A |
| Power - Max: | 679 W |
| Vce(on) (Max) @ Vge, Ic: | 2.3V @ 15V, 200A |
| Current - Collector Cutoff (Max): | 500 µA |
| Input Capacitance (Cies) @ Vce: | 35.615 nF @ 25 V |
| Input: | Standard |
| NTC Thermistor: | No |
| Operating Temperature: | -40°C ~ 175°C (TJ) |
| Mounting Type: | Chassis Mount |
| Package / Case: | Module |
| Supplier Device Package: | 56-PIM/Q2PACK (93x47) |
