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See Product Specifications
| Part Number: | NJD35N04G |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - Bipolar (BJT) - Single |
| Manufacturer: | onsemi |
| Packaging: | Tube |
| Product Status: | Active |
| Transistor Type: | NPN - Darlington |
| Current - Collector (Ic) (Max): | 4 A |
| Voltage - Collector Emitter Breakdown (Max): | 350 V |
| Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 20mA, 2A |
| Current - Collector Cutoff (Max): | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 2000 @ 2A, 2V |
| Power - Max: | 45 W |
| Frequency - Transition: | 90MHz |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | DPAK |
