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See Product Specifications
| Part Number: | MJD31C1G |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - Bipolar (BJT) - Single |
| Manufacturer: | onsemi |
| Packaging: | Tube |
| Product Status: | Active |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 3 A |
| Voltage - Collector Emitter Breakdown (Max): | 100 V |
| Vce Saturation (Max) @ Ib, Ic: | 1.2V @ 375mA, 3A |
| Current - Collector Cutoff (Max): | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 10 @ 3A, 4V |
| Power - Max: | 1.56 W |
| Frequency - Transition: | 3MHz |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
| Supplier Device Package: | I-PAK |
