Images are for reference only
See Product Specifications
| Part Number: | MJD253-1G |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - Bipolar (BJT) - Single |
| Manufacturer: | onsemi |
| Packaging: | Tube |
| Product Status: | Active |
| Transistor Type: | PNP |
| Current - Collector (Ic) (Max): | 4 A |
| Voltage - Collector Emitter Breakdown (Max): | 100 V |
| Vce Saturation (Max) @ Ib, Ic: | 600mV @ 100mA, 1A |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 200mA, 1V |
| Power - Max: | 1.4 W |
| Frequency - Transition: | 40MHz |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
| Supplier Device Package: | I-PAK |
