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See Product Specifications
| Part Number: | MJD112-1G |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - Bipolar (BJT) - Single |
| Manufacturer: | onsemi |
| Packaging: | Tube |
| Product Status: | Active |
| Transistor Type: | NPN - Darlington |
| Current - Collector (Ic) (Max): | 2 A |
| Voltage - Collector Emitter Breakdown (Max): | 100 V |
| Vce Saturation (Max) @ Ib, Ic: | 3V @ 40mA, 4A |
| Current - Collector Cutoff (Max): | 20µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 1000 @ 2A, 3V |
| Power - Max: | 1.75 W |
| Frequency - Transition: | 25MHz |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
| Supplier Device Package: | I-PAK |
