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| Part Number: | FJN3312RTA |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Manufacturer: | onsemi |
| Packaging: | Tape & Box (TB) |
| Product Status: | Obsolete |
| Transistor Type: | NPN - Pre-Biased |
| Current - Collector (Ic) (Max): | 100 mA |
| Voltage - Collector Emitter Breakdown (Max): | 40 V |
| Resistor - Base (R1): | 47 kOhms |
| Resistor - Emitter Base (R2): | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1mA, 5V |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| Frequency - Transition: | 250 MHz |
| Power - Max: | 300 mW |
| Mounting Type: | Through Hole |
| Package / Case: | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Supplier Device Package: | TO-92-3 |
