Images are for reference only
See Product Specifications
| Part Number: | 2SD1060R-1E |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - Bipolar (BJT) - Single |
| Manufacturer: | onsemi |
| Packaging: | Tube |
| Product Status: | Obsolete |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 5 A |
| Voltage - Collector Emitter Breakdown (Max): | 50 V |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 300mA, 3A |
| Current - Collector Cutoff (Max): | 100µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1A, 2V |
| Power - Max: | 1.75 W |
| Frequency - Transition: | 30MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220-3 |
